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GP2400ESM12
GP2400ESM12
Powerline N-Channel Single Switch IGBT Module Preliminary Information
DS5360-1.1 May 2000
The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
VCES VCE(sat) IC IC(PK)
KEY PARAMETERS 1200V (typ) 2.7V (max) 2400A (max) 4800A
Outline type code: E (See package details for further information)
FEATURES
s s s s
Fig. 1 Electrical connections - (not to scale)
External connection C1 Aux C C2 C3
n - Channel Enhancement Mode Non Punch Through Silicon High Gate Input Impedance Optimised For High Power High Frequency Operation 1200V Rating 2400A Per Module
s Isolated MMC Base with AlN
s s
G Aux E E1 E2 External connection E3
APPLICATIONS
s s s s
Fig.2 Single switch circuit diagram
High Power Switching Motor Control Inverters Traction Drives
ORDERING INFORMATION
Order As: GP2400ESM12 Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/12
GP2400ESM12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Tcase = 25C unless stated otherwise. Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. power dissipation Isolation voltage DC, Tcase = 75C, Tj = 125C 1ms, Tcase = 75C, Tj = 125C Tcase = 25C (Transistor), Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 20 2400 4800 20.8 2500 Units V V A A kW V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Rth(j-c) Rth(c-h) Parameter Thermal resistance - transistor Thermal resistance - diode Thermal resistance - case to heatsink (per module) Test Conditions DC junction to case DC junction to case Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 150 125 125 5 2 10 C C C Nm Nm Nm Min. Max. 6 13.3 6 Units C/kW C/kW C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/12
GP2400ESM12
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 2400A VGE = 15V, IC = 2400A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC, Tcase = 50C, Tj = 125C tp = 1ms, Tj = 125C IF = 2400A IF = 2400A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 2.7 3.2 2.2 2.3 270 10 Max. 3 100 12 7.5 3.5 4.0 2400 4800 2.4 2.5 Units mA mA A V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/12
GP2400ESM12
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4. Tcase = 25C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 2400A, VR = 50% VCES, dIF/dt = 2000A/s Tcase = 125C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 2400A, VR = 50% VCES, dIF/dt = 2000A/s Test Conditions IC = 2400A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 3.3 L ~ 80nH Min. Typ. 2570 400 980 2650 1000 620 400 Max. Units ns ns mJ ns ns mJ C Test Conditions IC = 2400A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 3.3 L ~ 80nH Min. Typ. 2300 400 820 2600 1100 490 200 Max. Units ns ns mJ ns ns mJ C
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 4/12
GP2400ESM12
SWITCHING DEFINITIONS
+15V 10% 0V -15V
t4 + 5s
Vge
Eon =
V
t1
ce c
.I dt
IC 90%
td(on) = t2 - t1 tr = t3 - t2
10%
Vce
t1
t2
t3
t4
Fig.3 Definition of turn-on switching times
+15V 90% 0V -15V
t7 + 5s
Vge
Eoff =
V
t5
ce c
.I dt
90%
td(off) = t6 - t5
10%
tf = t7 - t6
IC
Vce
t5
t6
t7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/12
GP2400ESM12
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V 4800 4200 3600
Collector current, IC - (A)
Vge = 20/15/12/10V 4800 Common emitter Tcase = 125C
Common emitter Tcase = 25C
4200 3600
Collector current, IC - (A)
3000 2400 1800 1200 600 0 0
3000 2400 1800 1200 600 0 0
1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V)
5.0
1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V)
5.0
Fig.5 Typical output characteristics
Fig.6 Typical output characteristics
1000
Conditions: Tcase = 25C 900 Vce = 600V Vge = 15V 800 700 600 Rg = 4.3 500 400 Rg = 3.3 300 200 Rg = 7
1200
1000
Conditions: Tcase = 125C Vce = 600V Vge = 15V
Turn-on energy, Eon - (mJ)
Turn-on energy, Eon (mJ)
800
A
B 600 C
400
200
100 0
0 0
A: Rg = 7 B: Rg = 4.3 C: Rg = 3.3
0
400
800 1200 1600 Collector current, IC - (A)
2000
2400
400
800 1200 1600 Collector current, IC - (A)
2000
2400
Fig.7 Typical turn-on energy vs collector current
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/12
GP2400ESM12
1600 Conditions: Tcase = 25C Vce = 600V Vge = 15V
1800 1600 1400
Turn-off energy, Eoff - (mJ) A
1400
Conditions: Tcase = 125'C Vce = 600V Vge = 15V
1200 Turn-off energy, Eoff - (mJ)
1200 1000 800 600 400
A B C
1000
B 800 C 600
400
200
A: Rg = 7 B: Rg = 4.3 C: Rg = 3.3 0 400 800 1200 1600 2000 2400
200 0 0 400 800 1200 1600 Collector current, IC - (A)
A: Rg = 7 B: Rg = 4.3 C: Rg = 3.3
0
Collector current, IC - (A)
2000
2400
Fig.9 Typical turn-off energy vs collector current
Fig.10 Typical turn-off energy vs collector current
160 Conditions: VCE = 600V VGE = 15V Rg = 3.3
3000 td(on) 2500
140
td(off)
120 Diode turn-off energy, Eoff - (mJ) Tcase = 125C 100
Switching times - (ns)
2000
80 Tcase = 25C 60
1500
Conditions: Tcase = 125C Vce = 600V Vge = 15V Rg = 3.3
1000 tr
40
500
20
tf
0
0
400
800 1200 1600 Collector current, IC - (A)
2000
2400
0 0
400
800 1200 1600 Collector current, IC - (A)
2000
2400
Fig.11 Typical diode reverse recovery charge vs collector current
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/12
GP2400ESM12
3500
2400 Tj = 25C 2000 Tj = 125C
Forward current, IF - (A)
3000
2500
Collector current, IC - (A)
1600
2000
1200
1500
800
1000
400
500
0 0 0.5 1 1.5 2 Forward voltage, VF - (V) 2.5 3
Conditions: Tcase = 125'C Vge = 15 Rg = 3.3 ohms 0 200 400 600 800 1000 Collector emitter voltage, Vce - (V) 1200 1400
0
Fig.13 Diode typical forward characteristics
Fig.14 Reverse bias safe operating area
10000
100
Transient thermal impedance, Zth(j-c) - (C/kW)
1000 Collector current, IC - (A) IC max (DC)
Diode 10 Transistor
tp = 50s 100 tp = 100s tp = 1ms
1
10
1 1 10 100 1000 10000 Collector emitter voltage, Vce - (V)
0.1 0.001
0.01
0.1 Pulse width, tp - (s)
1
10
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/12
GP2400ESM12
6000
4000
PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1
5000
3500 3000
Inverter phase current - (A)
4000
3000
2000
DC collector current, IC - (A)
Conditions: Tj = 125C, Tc = 75C, Rg = 3.3, VCC = 600V
2500 2000 1500 1000 500
1000
0 0
10 20
20
0 1 fMAX - (kHz)
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig.18 3-Phase inverter operating frequency
Fig.19 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/12
GP2400ESM12
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1650g Module outline type code: E
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/12
GP2400ESM12
ASSOCIATED PUBLICATIONS
Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving high power IGBTs with concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5190
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than a basic semiconductor switch, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/12
GP2400ESM12
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50. North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50. North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS5360-1 Issue No. 1.1 May 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 12/12

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